User profiles for H. OHTA

Hiromichi Ohta

- Verified email at es.hokudai.ac.jp - Cited by 56362

Hiroshi Ohta

- Verified email at anat2.med.kyoto-u.ac.jp - Cited by 10411

[HTML][HTML] Transparent oxide optoelectronics

H Ohta, H Hosono - Materials Today, 2004 - Elsevier
This article reviews transparent oxide optoelectronic devices based on our efforts focusing
on transparent thin-film transistors fabricated from single-crystalline films of InGaO 3 (ZnO) 5 …

Bisphosphonate-related osteonecrosis of the jaw: position paper from the allied task force committee of Japanese society for bone and mineral research, Japan …

T Yoneda, H Hagino, T Sugimoto, H Ohta… - Journal of bone and …, 2010 - Springer
Bisphosphonates (BPs) have been widely, efficiently, and safely used for the treatment of
osteoporosis, malignant hypercalcemia, bone metastasis of solid cancers, and multiple …

Recent Progress in Oxide Thermoelectric Materials: p-Type Ca3Co4O9 and n-Type SrTiO3

H Ohta, K Sugiura, K Koumoto - Inorganic chemistry, 2008 - ACS Publications
Thermoelectric energy conversion technology to convert waste heat into electricity has
received much attention. In addition, metal oxides have recently been considered as …

Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor

…, H Ohta, K Ueda, T Kamiya, M Hirano, H Hosono - Science, 2003 - science.org
We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film
transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel and …

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

…, H Ohta, A Takagi, T Kamiya, M Hirano, H Hosono - nature, 2004 - nature.com
… However, the carrier mobility of a-Si:H is lower by two or three orders of magnitude than
that of single-crystalline Si (∼ 200 cm 2 V -1 s -1 for carrier concentration ∼10 19 cm -3 ). The …

Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3

H Ohta, SW Kim, Y Mune, T Mizoguchi, K Nomura… - Nature materials, 2007 - nature.com
Enhancement of the Seebeck coefficient (S ) without reducing the electrical conductivity (σ)
is essential to realize practical thermoelectric materials exhibiting a dimensionless figure of …

Amorphous oxide semiconductors for high-performance flexible thin-film transistors

…, T Kamiya, H Ohta, M Hirano, H Hosono - Japanese journal of …, 2006 - iopscience.iop.org
… A-Si:H is the material that is most widely investigated for flexible electronics and has been …
) of a-Si:H TFTs are only <2 cm2ÁVÀ1ÁsÀ1 because the drift mobility of a-Si:H is controlled by …

Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3 (ZnO) 5 films

…, H Ohta, K Ueda, M Hirano, H Hosono - Applied Physics …, 2004 - pubs.aip.org
We have investigated carrier transport in a crystalline oxide semiconductor InGaO 3 (Z nO)
5 using single-crystalline thin films. When carrier concentration is less than 2× 10 18 cm− 3⁠, …

Magnetic resonance imaging study of hippocampal volume in chronic, combat-related posttraumatic stress disorder

TV Gurvits, ME Shenton, H Hokama, H Ohta… - Biological …, 1996 - Elsevier
This study used quantitative volumetric magnetic resonance imaging techniques to explore
the neuroanatomic correlates of chronic, combat-related posttraumatic stress disorder (PTSD…

Deep-ultraviolet transparent conductive thin films

M Orita, H Ohta, M Hirano, H Hosono - Applied Physics Letters, 2000 - pubs.aip.org
Thin films of β- Ga 2 O 3 with an energy band gap of 4.9 eV were prepared on silica glass
substrates by a pulsed-laser deposition method. N-type conductivity up to ∼1 S cm −1 was …