Controllable production of nanometre-sized structures is an important field of research, and
synthesis of one-dimensional objects, such as nanowires, is a rapidly expanding area with …

… From the slope of the line fitted to the experimental data points we deduced an effective
barrier height, qΦ B , of 0.57 eV, in good agreement with the simulation. This is, to the best of our …

We report on the growth of designed heterostructures placed within semiconductor
nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron …

During the last half century, a dramatic downscaling of electronics has taken place, a
miniaturization that the industry expects to continue for at least a decade. We present efforts to use …

… b An InAs/InP nanowhisker contacted by two alloyed ohmic contacts. Scale bar depicts 2 m.
c … b A onedimensionally integrated profile of the boxed area in a. The width of the barrier is …

… b I–V curves for the 55 nm diameter device in Fig. 2a recorded for two different gate voltages
at T 4.2 K, corresponding to a blocked black and a conducting state gray. c Current through …

We present growth studies of InAs nanowires nucleated from lithographically positioned Au
seeds on InAs (111)B substrates. The nanowires are grown in a chemical beam epitaxy …

Lactoferrin, a glycoprotein present in milk, mucosal secretions and neutrophils contributes to
host defense. We have previously shown that orally given milk lactoferrin (LF) mediates anti-…

… (b) SEM micrograph of a GaAs(111)B substrate with GaAs whiskers grown from 40 nm Au
aerosol … (b) GaAs whiskers, grown from the pattern of Au nano-particles. Here the increase in …

PURPOSE: This study investigated the value of intense follow-up compared with no follow-up
after curative surgery of cancer in the colon or rectum. METHODS: One hundred seven …